Fe and Cr doping of liquid‐phase epitaxial In0.53Ga0.47As/InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334810
Reference22 articles.
1. Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP
2. High purity InP and InGaAsP grown by liquid phase epitaxy
3. Effect of Baking Temperature on Purity of LPE Ga0.47In0.53As
4. LPE growth of high purity InP and In1−xGaxP1−yAsy
5. Growth and photoluminescence spectra of high‐purity liquid phase epitaxial In0.53Ga0.47As
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1. Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra;Applied Physics Letters;2018-12-03
2. The Role and Mechanism of Fe-ion Bombardment in creating highly resistive InGaAs layers;2006 European Microwave Integrated Circuits Conference;2006-09
3. Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy;Journal of Electronic Materials;1995-11
4. Oxygen‐based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide;Applied Physics Letters;1995-08-21
5. Intentional Defect Incorporation in Metalorganic Vapor Phase Epitaxy Indium Gallium Arsenide by Oxygen Doping;MRS Proceedings;1995
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