A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors-Reference-Cited by-同舟云学术

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

Published:2009-04-15 Issue:8 Volume:105 Page:084503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cassé M.,Rochette F.,Thevenod L.,Bhouri N.,Andrieu F.,Reimbold G.,Boulanger F.,Mouis M.,Ghibaudo G.,Maude D. K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3097764

Reference43 articles.

1. Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress

2. F. Andrieu, T. Ernst, O. Faynot, O. Rozeau, Y. Bogumilowicz, J.M. Hartmann, L. Brévard, A. Toffoli, D. Lafond, H. Dansas, B. Ghyselen, F. Fournel, G. Ghibaudo, and S. Deleonibus, Proceedings of the ESSDERC, Grenoble, France, 2005 (unpublished), pp. 297–300.

3. On the Apparent Mobility in Nanometric n-MOSFETs

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