Physics and performance of nanoscale semiconductor devices at cryogenic temperatures

Author:

Balestra F,Ghibaudo G

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 43 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Reinforcement-Learning-Assisted Power Amplifier for RF Fingerprint Generation in 65 nm CMOS;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-07

2. A Benchmark of Cryo-CMOS Embedded SRAM/DRAMs in 40-nm CMOS;IEEE Journal of Solid-State Circuits;2024-07

3. 60Co gamma radiation effects on NPN transistor at cryogenic temperature;Radiation Protection Dosimetry;2024-07

4. Comparative Cryogenic Investigation of FD-SOI Devices with Doped Epitaxial and Metallic Source/Drain;ECS Journal of Solid State Science and Technology;2024-05-31

5. Modeling the Temperature-Dependence of Silicon Diode with Fermi-Dirac Statistics down to 50K;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10

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