60Co gamma radiation effects on NPN transistor at cryogenic temperature
Author:
Affiliation:
1. University of Mysore Department of Studies in Physics, , Manasagangotri, Mysuru 570006, India
2. JSS College Department of PG Studies in Physics, , Ooty Road, Mysuru 570025, India
Abstract
Funder
Inter University Accelerator Centre
Publisher
Oxford University Press (OUP)
Link
https://academic.oup.com/rpd/article-pdf/200/11-12/1183/58571069/ncae011.pdf
Reference16 articles.
1. Electronic components and circuits for extreme temperature environments
2. Modeling BJT radiation response with non-uniform energy distributions of interface traps;Barnaby;IEEE Trans. Nucl. Sci.,2000
3. The cryogenic temperature behavior of bipolar, MOS, and DTMOS transistors in standard CMOS;Homulle;IEEE J. Electron Devices Soc.,2018
4. The effect of electron-phonon interaction on the formation of reverse currents of pn-junctions of silicon-based power semiconductor devices;Bulyarskiy;Solid State Electron.,2019
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