Residual-free reactive ion etching of gold layers-Reference-Cited by-同舟云学术

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Residual-free reactive ion etching of gold layers

Published:2018-07 Issue:7 Volume:8 Page:075026
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Franz Gerhard¹,Oberhausen Wolfhard²,Meyer Ralf²,Amann Markus-Christian²

Affiliation:

1. Laboratory for Surface Refinement and Thin Film Technology Dept. 06, Munich University of Applied Sciences, Munich D 80335, Bavaria, Germany

2. Walter Schottky Institut, Technische Universität München, 4 Am Coulombwall, Garching D 85748, Bavaria, Germany

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5037886

Reference36 articles.

1. Beam-Lead Technology

2. W. M. Loh: Modeling and Measurement of Contact Resistances, Techn. Rep. G830-1, Stanford University, Stanford, CA 94305, Dec. 1987, p. 11

3. Extremely Low Contact Resistivity of Ti/Pt/Au Contacts on p + ‐ InGaAs as Determined by a New Evaluation Method

4. High Speed Anisotropic Reactive Ion Etching of Gold Films

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