Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3127223
Reference15 articles.
1. Phase-change materials for rewriteable data storage
2. Electronic Properties of Amorphous and Crystalline Ge2Sb2Te5Films
3. Unravelling the interplay of local structure and physical properties in phase-change materials
4. Phase-Change Behavior of Stoichiometric Ge[sub 2]Sb[sub 2]Te[sub 5] in Phase-Change Random Access Memory
5. Phase separation behavior of Ge2Sb2Te5 line structure during electrical stress biasing
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