Analysis of scattering mechanisms in zinc oxide films grown by the atomic layer deposition technique
Author:
Affiliation:
1. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
2. Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University, ul. Dewajtis 5, 01-815 Warsaw, Poland
Funder
National Science Center of Poland
The National Center for Research and Development (NCBiR)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4927294
Reference46 articles.
1. ZnO: Material, Physics and Applications
2. Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications
3. Thin film transistors with a ZnO channel and gate dielectric layers of HfO2 by atomic layer deposition
4. Present status of transparent conducting oxide thin-film development for Indium-Tin-Oxide (ITO) substitutes
5. Fundamentals of zinc oxide as a semiconductor
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