Low temperature limits to molecular beam epitaxy of GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112734
Reference14 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE
3. Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °C
4. Effects of As4 flux on reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures
5. Dynamics of film growth of GaAs by MBE from Rheed observations
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1. Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing;Russian Physics Journal;2008-09
2. Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth;Semiconductors;2005
3. Characterization of nanometer As-clusters in low-temperature grown GaAs by transient reflectivity measurements;Journal of Applied Physics;2002-02-15
4. Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy;Journal of Applied Physics;2001-08
5. Threading dislocation reduction mechanisms in low-temperature-grown GaAs;Journal of Applied Physics;1999-11
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