Characterization of nanometer As-clusters in low-temperature grown GaAs by transient reflectivity measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1430886
Reference25 articles.
1. Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures
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4. Semiconductor saturable absorber mirrors supporting sub-10-fs pulses
5. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
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