Formation mechanism of crater defects on HgCdTe/CdZnTe (211) B epilayers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1633017
Reference23 articles.
1. Prospects of uncooled HgCdTe detector technology
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4. A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe IR detectors and focal plane arrays
5. Isolation and control of voids and void-hillocks during molecular beam epitaxial growth of HgCdTe
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