MBE growth of Topological Isolators based on strained semi-metallic HgCdTe layers-Reference-Cited by-同舟云学术

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MBE growth of Topological Isolators based on strained semi-metallic HgCdTe layers

Published:2017-12 Issue: Volume:480 Page:1-5
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Grendysa J.,Tomaka G.,Sliz P.,Becker C.R.,Trzyna M.,Wojnarowska-Nowak R.,Bobko E.,Sheregii E.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Weyl electrons kiss

2. Quantum Spin Hall Effect in Graphene

3. Quantum Spin Hall Effect

4. Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

5. Quantum Spin Hall Insulator State in HgTe Quantum Wells

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoindentation Studies of the MBE-Grown, Zero-Gap (Hg,Cd)Te Epilayers;Acta Physica Polonica A;2019-10

2. Structure of surface electronic states in strained mercury telluride;New Journal of Physics;2019-04-12

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