The near-room-temperature upsurge of electrical resistivity in Lu-H-N is not superconductivity, but a metal-to-poor-conductor transition

Author:

Peng Di123ORCID,Zeng Qiaoshi14ORCID,Lan Fujun1,Xing Zhenfang15,Ding Yang1,Mao Ho-kwang14

Affiliation:

1. Center for High Pressure Science and Technology Advanced Research 1 , Shanghai 201203, China

2. Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences 2 , Hefei 230031, China

3. University of Science and Technology of China 3 , Hefei 230026, China

4. Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments (MFree), Shanghai Advanced Research in Physical Sciences (SHARPS) 4 , Shanghai 201203, China

5. State Key Laboratory of Superhard Materials, Institute of Physics, Jilin University 5 , Changchun 130012, China

Abstract

The recent report of superconductivity in nitrogen-doped lutetium hydride (Lu-H-N) at 294 K and 1 GPa brought hope for long-sought-after ambient-condition superconductors. However, the failure of scientists worldwide to independently reproduce these results has cast intense skepticism on this exciting claim. In this work, using a reliable experimental protocol, we synthesized Lu-H-N while minimizing extrinsic influences and reproduced the sudden change in resistance near room temperature. With quantitative comparison of the temperature-dependent resistance between Lu-H-N and the pure lutetium before reaction, we were able to clarify that the drastic resistance change is most likely caused by a metal-to-poor-conductor transition rather than by superconductivity. Herein, we also briefly discuss other issues recently raised in relation to the Lu-H-N system.

Funder

Shanghai Science and Technology Development Foundation

Publisher

AIP Publishing

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics

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