One‐flux analysis of current blocking in double‐heterostructure bipolar transistors with composite collectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361107
Reference15 articles.
1. InGaAs/InP composite collector heterostructure bipolar transistors
2. Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistors
3. InP/InGaAs double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfur delta doping in the collector region
4. High-speed InGaAs(P)/InP double-heterostructure bipolar transistors
5. Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors
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1. Elimination of Current Blocking in Ternary InAlAs-InGaAs-InAlAs Double Heterojunction Bipolar Transistors;IEEE Transactions on Electron Devices;2010-12
2. One-flux theory of a nonabsorbing barrier;Journal of Applied Physics;2002
3. Temperature independent current blocking due to hot electrons in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-03
4. Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors;Journal of Applied Physics;1997-11-15
5. Improvement of fT by dipole doping at the collector heterojunction in InP double HBTs;Electronics Letters;1997
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