X-ray absorption of Si–C–N thin films: A comparison between crystalline and amorphous phases-Reference-Cited by-同舟云学术

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X-ray absorption of Si–C–N thin films: A comparison between crystalline and amorphous phases

Published:1999-11-15 Issue:10 Volume:86 Page:5609-5613
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chang Y. K.,Hsieh H. H.,Pong W. F.,Tsai M.-H.,Dann T. E.,Chien F. Z.,Tseng P. K.,Chen L. C.,Wei S. L.,Chen K. H.,Wu J.-J.,Chen Y. F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.371568

Reference18 articles.

1. Growth and electronic properties of thin Si3N4films grown on Si in a nitrogen glow discharge

2. Growth and electronic properties of thin Si3N4films grown on Si in a nitrogen glow discharge

3. Calculation of bulk moduli of diamond and zinc-blende solids

4. Prediction of New Low Compressibility Solids

5. Atomic configurations and local order in laser‐synthesized Si, Si‐N, Si‐C, and Si‐C‐N nanometric powders, as studied by x‐ray‐induced photoelectron spectroscopy and extended x‐ray‐absorption fine‐structure analysis

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