Voltage-controlled magnetization switching in MRAMs in conjunction with spin-transfer torque and applied magnetic field
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4968543
Reference41 articles.
1. Giant Magneto-Resistance Devices
2. Reducing Switching Latency and Energy in STT-MRAM Caches With Field-Assisted Writing
3. Emission of spin waves by a magnetic multilayer traversed by a current
4. Current-driven excitation of magnetic multilayers
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1. Voltage Controlled Interlayer Exchange Coupling and Magnetic Anisotropy Effects in Perpendicular Magnetic Heterostructures;Advanced Functional Materials;2024-06-27
2. From Charge to Spin and Spin to Charge: Stochastic Magnets for Probabilistic Switching;Proceedings of the IEEE;2020-08
3. Impact of Spin-Transfer Torque on the Write-Error Rate of a Voltage-Torque-Based Magnetoresistive Random-Access Memory;Physical Review Applied;2019-06-10
4. Deterministic Magnetization Switching by Voltage Control of Magnetic Anisotropy and Dzyaloshinskii-Moriya Interaction under an In-Plane Magnetic Field;Physical Review Applied;2018-11-16
5. Effect of interface NiO layer on magnetism in Fe/BaTiO3 thin film;Japanese Journal of Applied Physics;2018-06-27
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