Ellipsometric study of silicon implanted with boron ions in low doses
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90848
Reference9 articles.
1. Role of sequential annealing, oxidation, and diffusion upon defect generation in ion‐implanted silicon surfaces
2. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
3. Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose
4. Optical Reflectivity Studies of Damage in Ion Implanted Silicon
5. ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN THE 1 TO 6 eV REGION
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1. Ellipsometric models for vertically inhomogeneous composite structures;physica status solidi (a);2008-04
2. ELLIPSOMETRIC CHARACTERIZATION OF THIN FILMS;Handbook of Surfaces and Interfaces of Materials;2001
3. Chapter 1 Ellipsometric Analysis;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997
4. Disorder effects on optical spectra and band structure of Si induced by ion implantation;Journal of Applied Physics;1989-12
5. In-Situ Reflectance Measurements of Measurements of During Ion Implantation;MRS Proceedings;1989
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