Annealing behavior of deep‐level defects in 1 MeV electron irradiated GaAs-Reference-Cited by-同舟云学术

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Annealing behavior of deep‐level defects in 1 MeV electron irradiated GaAs

Published:1994-03 Issue:5 Volume:75 Page:2354-2357
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lai S. T.,Nener B. D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.356254

Reference43 articles.

1. The EL2 Defect in GaAs

2. Variation of the midgap electron traps (EL2) in liquid encapsulated Czochralski GaAs

3. Spectral distributions of photoquenching rate and multimetastable states for midgap electron traps (EL2 family) in GaAs

4. Identification of the “EL2 Family” Midgap Levels in GaAs

5. Characterization of the EL2 center in GaAs by optical admittance spectroscopy

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1. Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique;Nanotechnology;2016-12-20

2. TheE1–E2 center in gallium arsenide is the divacancy;Journal of Physics: Condensed Matter;2015-01-30

3. Simple intrinsic defects in gallium arsenide;Modelling and Simulation in Materials Science and Engineering;2009-11-23

4. Cryogenic Performance and Reliability of GaAs CHFETs;2006 IEEE International Integrated Reliability Workshop Final Report;2006-10

5. Small self-interstitial clusters in GaAs;Journal of Physics: Condensed Matter;2003-02-03

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