LATTICE LOCATION OF DOPANT ELEMENTS IMPLANTED INTO Ge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652479
Reference5 articles.
1. A COMPARISON OF THE HOT IMPLANTATION BEHAVIOR OF SEVERAL GROUP‐III AND ‐V ELEMENTS IN Si AND Ge
2. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
3. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
4. Solid Solubilities of Impurity Elements in Germanium and Silicon*
5. Anomalous Properties of Silicon Recrystallized Layers Containing Indium Atoms
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1. Structural and electrical properties of In-implanted Ge;Journal of Applied Physics;2015-10-28
2. Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals;Journal of Applied Physics;2014-08-21
3. Intrinsic and extrinsic diffusion of indium in germanium;Journal of Applied Physics;2009-09-15
4. Lattice location study of implanted In in Ge;Journal of Applied Physics;2009-04-15
5. Low‐temperature annealing of As‐implanted Ge;Journal of Applied Physics;1988-01
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