Subband tuning in semiconductor quantum wells using narrow barriers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352085
Reference7 articles.
1. Tailoring the intersubband absorption in quantum wells
2. New method of controlling the gaps between the minibands of a superlattice
3. Narrow barriers and tailored confinement states in quantum wells
4. Investigation of the MBE growth of GaAs/AlAs quantum wells and the effect of AlAs spikes on their luminescence
5. Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures
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1. Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier;Semiconductor Science and Technology;2007-01-19
2. Structural and electrophysical properties of pseudomorphic GaAs/InGaAs/GaAs quantum wells: effect of thin central AlAs barrier;SPIE Proceedings;2006-05-24
3. n-AlGaAs/GaAs/n-AlGaAs double quantum wells with an AlAs barrier: Relating the cladding doping level to structural and transport properties;Russian Microelectronics;2005-03
4. Structural characterization of undoped and <emph type="1">Si</emph>-doped <emph type="1">AlGaAs/GaAs</emph> double quantum wells separated by a thin <emph type="1">AlAs</emph> layer;SPIE Proceedings;2004-05-28
5. Quantum confinement of Te bound exciton in ZnSe/ZnSe1−xTex and ZnSe/Zn1−yCdySe quantum wells;Materials Chemistry and Physics;2003-07
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