Author:
Vasil?evskii I. S.,Galiev G. B.,Ganin G. V.,Imamov R. M.,Klimov E. A.,Lomov A. A.,Mokerov V. G.,Saraikin V. V.,Chuev M. A.
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Cazaux, J.-L., Geok-Ing, N.G., Pavlidis, D., and Chau, H.-F., An Analytical Approach to the Capacitance-Voltage Characteristics of Double-Heterojunction HEMTs, IEEE Trans. Electron Devices, 1988, vol. 35, pp. 1223–1231.
2. Nawaz, M., A Simple Analytical Charge Control Model for Double Delta Doped HEMTs, Solid-State Electron., 1999, vol. 43, pp. 687–690.
3. Požela, J., Jucienė, V., and Požela, K., Confined Electron-Optical Phonon Scattering Rates in 2D Structures Containing Electron and Phonon Walls, Semicond. Sci. Technol., 1995, vol. 10, pp. 1076–1083.
4. Požela, J., Požela, K., and Jucienė, V., Electron Mobility and Electron Scattering by Polar Optical Phonons in Heterostructure Quantum Wells, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2000, vol. 34, issue9, pp. 1053–1057.
5. Tsuchiya, T. and Ando, T., Mobility Enhancement in Quantum Wells by Electronic-State Modulation, Phys. Rev. B, 1993, vol. 48, pp. 4599–4603.