Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122303
Reference9 articles.
1. Recent developments in SiC single-crystal electronics
2. 2000 V 6H‐SiCp‐njunction diodes grown by chemical vapor deposition
3. A 4.5 kV 6H silicon carbide rectifier
4. High Electric Field Breakdown of 4H-SiC PN Junction Diodes
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