Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy-Reference-Cited by-同舟云学术

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Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy

Published:2016-09-05 Issue:10 Volume:109 Page:101903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Brahlek Matthew¹,Zhang Lei¹^ORCID,Zhang Hai-Tian¹^ORCID,Lapano Jason¹,Dedon Liv R.²³,Martin Lane W.²³,Engel-Herbert Roman¹

Affiliation:

1. Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16801, USA

2. Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA

3. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4962388

Reference39 articles.

1. Metal-insulator transitions

2. Doping a Mott insulator: Physics of high-temperature superconductivity

3. Topological Phase Transition and Texture Inversion in a Tunable Topological Insulator

4. Unexpected mass acquisition of Dirac fermions at the quantum phase transition of a topological insulator

5. Topological-Metal to Band-Insulator Transition in(Bi1−xInx)2Se3Thin Films

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