Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1564861
Reference12 articles.
1. Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation
2. Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System
3. Surface-Structure-Controlled Heteroepitaxial Growth of3C–SiC(001)3×2on Si(001): Simulations and Experiments
4. Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C–SiC/Si(100) heteroepitaxy
5. Electronic structure of the single-domain Si(001)21-K surface
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