Combustion-process derived comparable performances of Zn-(In:Sn)-O thin-film transistors with a complete miscibility-Reference-Cited by-同舟云学术

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Combustion-process derived comparable performances of Zn-(In:Sn)-O thin-film transistors with a complete miscibility

Published:2014-09-29 Issue:13 Volume:105 Page:132105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jiang Qingjun¹,Lu Jianguo¹,Cheng Jipeng¹,Li Xifeng²,Sun Rujie¹,Feng Lisha¹,Dai Wen¹,Yan Weichao¹,Ye Zhizhen¹

Affiliation:

1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

2. Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China

Funder

Open Project of Key Laboratory of Advanced Display and System Applications, Ministry of Education (Shanghai University)

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896990

Reference21 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Water assisted oxygen absorption on the instability of amorphous InAlZnO thin-film transistors

3. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

4. Present status of amorphous In–Ga–Zn–O thin-film transistors

5. Oxygen “Getter” Effects on Microstructure and Carrier Transport in Low Temperature Combustion-Processed a-InXZnO (X = Ga, Sc, Y, La) Transistors

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