Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors-Reference-Cited by-同舟云学术

Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

Published:2016-05-02 Issue:18 Volume:108 Page:182104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Eungtaek¹,Kim Choong-Ki¹,Lee Myung Keun¹,Bang Tewook¹,Choi Yang-Kyu¹,Park Sang-Hee Ko²,Choi Kyung Cheol¹^ORCID

Affiliation:

1. School of Electrical Engineering, KAIST, Daejeon 34141, South Korea

2. Department of Material Science and Engineering, KAIST, Daejeon 34141, South Korea

Funder

Open innovation Lab Project NNFC

IC Design Education Center (IDEC)

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4948765

Reference20 articles.

1. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

4. Role of Ga2O3–In2O3–ZnO channel composition on the electrical performance of thin-film transistors

5. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

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