Field effect-induced quasi-one-dimensional electron transport in GaAs/AlxGa1−xAs heterostructures-Reference-Cited by-同舟云学术

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Field effect-induced quasi-one-dimensional electron transport in GaAs/AlxGa1−xAs heterostructures

Published:1997-11 Issue:9 Volume:82 Page:4384-4387
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Herfort J.,Austing D. G.,Hirayama Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.366253

Reference15 articles.

1. High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant‐induced disorder is eliminated

2. High mobility GaAs heterostructure field effect transistor for nanofabrication in which dopant‐induced disorder is eliminated

3. Transport in gated undoped GaAs/AlxGa1−xAs heterostructures in the high density and high mobility range

4. Formation of two‐dimensional electron and hole gases in undoped AlxGa1−xAs/GaAs heterostructures

5. Breakdown of quantized conductance in point contacts calculated using realistic potentials

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1. Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene;Semiconductor Science and Technology;2005-07-01

2. Reference key and author index for Part III;Landolt-Börnstein - Group III Condensed Matter

3. 7.11 References for Section 7;Landolt-Börnstein - Group III Condensed Matter

4. 7.10 Localization;Landolt-Börnstein - Group III Condensed Matter

5. 7.7 Magnetic field;Landolt-Börnstein - Group III Condensed Matter

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