Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene-Reference-Cited by-同舟云学术

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Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene

Published:2005-07-01 Issue:8 Volume:20 Page:814-818
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Knop M,Richter M,Maßmann R,Wieser U,Kunze U,Reuter D,Riedesel C,Wieck A D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Quantized conductance in ballistic constrictions at 30 K

2. Fabrication and transport properties of clean long one-dimensional quantum wires formed in modulation-doped GaAs/AlGaAs heterostructures

3. Temperature limits for ballistic quantization in a GaAs/AlGaAs one-dimensional constriction

4. Electrostatically defined heterojunction rings and the Aharonov–Bohm effect

5. Parallel quantum point contacts fabricated with independently biased gates and a submicrometer airbridge post

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2. Positive centre voltage in T-branch junctions on n-type GaAs/AlGaAs based on hydrodynamics;Semiconductor Science and Technology;2017-09-01

3. Identification and separation of rectifier mechanisms in Si/SiGe ballistic cross junctions;Journal of Applied Physics;2017-01-07

4. Magnetoconductance Switching conductance switching by Phase Modulation in Arrays of Oval Quantum Billiards quantum billiard;Control of Magnetotransport in Quantum Billiards;2016-11-17

5. Quantization and anomalous structures in the conductance of Si/SiGe quantum point contacts;Journal of Applied Physics;2016-04-07

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