Identification and separation of rectifier mechanisms in Si/SiGe ballistic cross junctions
Author:
Affiliation:
1. Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum, Germany
2. Daimler AG, Forschungszentrum Ulm, Wilhelm-Runge-Straße 11, D-89081 Ulm, Germany
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4973279
Reference38 articles.
1. Nonlocal quantum transport in narrow multibranched electron wave guide of GaAs-AlGaAs
2. Phonon-induced breakdown of negative bend resistance in an asymmetric Si∕SiGe cross junction
3. Electron focusing in two‐dimensional systems by means of an electrostatic lens
4. Refractive switch for two‐dimensional electrons
5. Ballistic electron focusing by elliptic reflecting barriers
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1. Ballistic rectification based on inhomogeneous magnetic stray fields;Journal of Applied Physics;2019-04-28
2. Positive centre voltage in T-branch junctions on n-type GaAs/AlGaAs based on hydrodynamics;Semiconductor Science and Technology;2017-09-01
3. Input-Current Addition in Closely Positioned Dual-Stage Ballistic Rectifiers;Physical Review Applied;2017-04-27
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