The effects of thermal history on electrical properties and microdefects of dislocation‐free liquid‐encapsulated Czochralski GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347638
Reference34 articles.
1. Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor
2. Direct observation of the principal deep level (EL2) in undoped semi‐insulating GaAs
3. Dislocation-free GaAs and InP crystals by isoelectronic doping
4. Crystal growth of completely dislocation-free and striation-free GaAs
5. Electrical uniformity for Si‐implanted layer of completely dislocation‐free and striation‐free GaAs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Liquid encapsulated, vertical Bridgman growth of GaAs crystal with uniform EL2 concentration;Journal of Crystal Growth;1995-10
2. Annealing of GaAs grown by vertical zone melting;Journal of Crystal Growth;1994-08
3. Homogenization of EL2 defect concentration of dislocation‐free liquid‐encapsulated‐Czochralski GaAs:In in its growth direction;Journal of Applied Physics;1992-03-15
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