Annealing of GaAs grown by vertical zone melting-Reference-Cited by-同舟云学术

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Annealing of GaAs grown by vertical zone melting

Published:1994-08 Issue:3-4 Volume:141 Page:343-346
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nordquist P.E.R.,Henry R.L.,Blakemore J.S.,Saban S.B.,Gorman R.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Semi-Insulating III–V Materials 1984;Rumsby,1984

2. Semi-Insulating III–V Materials 1990;Baumgartner,1990

3. The effects of thermal history on electrical properties and microdefects of dislocation‐free liquid‐encapsulated Czochralski GaAs

4. Semi-Insulating III–V Materials 1990;Mori,1990

5. Semi-Insulating III–V Materials 1992;Freidenreich,1993

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theory of EL2 and EL5 formation in melt‐grown GaAs:Si;Journal of Applied Physics;1995-09-15

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