The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354576
Reference10 articles.
1. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
2. The effect of substrate growth area on misfit and threading dislocation densities in mismatched heterostructures
3. Effects of mesa area and orientation on defects in strained InxGa1−xAs films grown by LPOMCVD
4. Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas
5. Influence of trench depth on the misfit dislocation density at strained epitaxial layer interfaces grown on patterned GaAs substrates
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Patterned Substrate Epitaxy;Lattice Engineering;2012-11-27
2. Misfit dislocation interactions observed by cathodoluminescence in InGaAs on off-cut, patterned GaAs;Journal of Applied Physics;2003-08
3. Stress and Temperature Dependence of Misfit Dislocation Nucleation Rate in SiGe Alloys: Evidence of Homogeneous Nucleation;MRS Proceedings;1996
4. The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si;Journal of Applied Physics;1994-09
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