Insituinvestigation of the amorphous silicon/silicon nitride interfaces by spectroellipsometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349450
Reference18 articles.
1. Present and future applications of amorphous silicon and its alloys
2. Electronic states at the hydrogenated amorphous silicon/silcon nitride interface
3. Effects of the Deposition Sequence on Amorphous Silicon Thin-Film Transistors
4. Chemical vapor deposition of a silicon nitride layer with an excellent interface by NH3plasma treatment
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1. Characterization of neutral and charged defects in a-Si3N4:H/a-Si:H multilayers;Applied Surface Science;1997-06
2. Interfacial neutral‐ and charged‐dangling‐bond densities between hydrogenated amorphous silicon and hydrogenated amorphous silicon nitride in top nitride and bottom nitride structures;Applied Physics Letters;1995-05-15
3. Optoelectronic Properties of Amorphous Silicon Using the Plasma-Enhanced Chemical Vapor Deposition (PECVD) Technique;Plasma Deposition of Amorphous Silicon-Based Materials;1995
4. Diagnostics of Amorphous Silicon (a-Si) Plasma Processes;Plasma Deposition of Amorphous Silicon-Based Materials;1995
5. Silicon-Hydrogen ($\bf SiH_{\mbi n}$, ( n= 1, 2, 3)) Bonding Configurations in Very Thin Hydrogenated Amorphous Silicon Films Deposited on Various Kinds of Substrates under Different $\bf SiH_{4}$ Dilution Conditions;Japanese Journal of Applied Physics;1994-11-15
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