Silicon-Hydrogen ($\bf SiH_{\mbi n}$, ( n= 1, 2, 3)) Bonding Configurations in Very Thin Hydrogenated Amorphous Silicon Films Deposited on Various Kinds of Substrates under Different $\bf SiH_{4}$ Dilution Conditions-Reference-Cited by-同舟云学术

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Silicon-Hydrogen ($\bf SiH_{\mbi n}$, ( n= 1, 2, 3)) Bonding Configurations in Very Thin Hydrogenated Amorphous Silicon Films Deposited on Various Kinds of Substrates under Different $\bf SiH_{4}$ Dilution Conditions

Published:1994-11-15 Issue:Part 2, No. 11B Volume:33 Page:L1577-L1580
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shirai Hajime,Drevillon Bernard

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The long-range ordering, electron spectrum, and properties of amorphous silicon films – II. Defect states and optical parameters;Physica B: Condensed Matter;2003-09

2. Optical evidence of amorphous-network change in the initial-growth stage a-Si:H;Journal of Non-Crystalline Solids;2000-09

3. Initial Stage of Microcrystalline Silicon Growth by Plasma-Enhanced Chemical Vapor Deposition;Japanese Journal of Applied Physics;1996-09-15

4. Improved hydrogen depth profiles with in‐chamber annealing of hydrogenated amorphous silicon thin films;Journal of Applied Physics;1996-01

5. Surface Morphology and Crystallite Size during Growth of Hydrogenated Microcrystalline Silicon by Plasma-Enhanced Chemical Vapor Deposition;Japanese Journal of Applied Physics;1995-02-15

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