On the formation of inhomogeneities in epitaxial CoSi2 layers grown from the interaction of Co/Ti bilayers with Si 〈100〉 substrates-Reference-Cited by-同舟云学术

On the formation of inhomogeneities in epitaxial CoSi2 layers grown from the interaction of Co/Ti bilayers with Si 〈100〉 substrates

Published:1996-07-15 Issue:2 Volume:80 Page:762-768
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Cardenas J.¹,Zhang S.‐L.¹,Svensson B. G.¹,Petersson C. S.¹

Affiliation:

1. Royal Institute of Technology, Solid State Electronics, P.O. Box Electrum 229, S‐164 40 Kista, Stockholm, Sweden

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference34 articles.

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3. K. Rajan, L. M. Hsiung, J. R. Jimenez, L. J. Schowalter, K. V. Ramanathan, R. D. Thompson, and S. S. Iyer, J. Appl. Phys. 70, 4853 (1991).JAPIAU0021-8979

4. E. W. Alice, K. T. Short, R. C. Dynes, J. P. Garno, and J. M. Gibson, Appl. Phys. Lett. 50, 95 (1987).APPLAB0003-6951

5. S. M. Yalisove, R. T. Tung, and J. L. Batstone, Mater. Res. Soc. Symp. Proc. 116, 439 (1988).MRSPDH0272-9172

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