Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3100206
Reference39 articles.
1. Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
2. Infrared Lattice Vibrations and Free-Electron Dispersion in GaN
3. First-principles calculations of effective-mass parameters of AlN and GaN
4. Determination of the effective mass of GaN from infrared reflectivity and Hall effect
5. Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN
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3. MOCVD grown ultraviolet microlight-emitting diodes with an InGaN/GaN/AlGaN active region design;Journal of Vacuum Science & Technology A;2023-11-27
4. Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42);Journal of Applied Physics;2023-11-09
5. Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures;Journal of Applied Physics;2023-10-18
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