Rapid onset of strain relief by massive generation of misfit dislocations in Bi(111)/Si(001) heteroepitaxy
Author:
Affiliation:
1. Department of Physics and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, Lotharstr. 1, 47057 Duisburg, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5088760
Reference28 articles.
1. Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices
2. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
3. Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions
4. Strained Si MOSFETs on relaxed SiGe platforms: performance and challenges
5. Strain scaling for CMOS
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