X‐ray analysis of strain relaxation in strained‐layer superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357754
Reference12 articles.
1. X‐ray rocking curve analysis of superlattices
2. High resolution X-ray diffraction studies of semiconductor superlattices
3. High‐resolution x‐ray diffraction studies of InGaAs(P)/InP superlattices grown by gas‐source molecular‐beam epitaxy
4. Crystallographic tilting of heteroepitaxial layers
5. Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation‐doped In0.3Ga0.7As/In0.29Al0.71As heterostructures
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1. InGaAs/InP single quantum well structure grown on GaAs substrate with linearly graded metamorphic InGaP buffer layer by solid source molecular beam epitaxy;Solid-State Electronics;2002-06
2. Matrix method for the x-ray rocking curve simulation;Journal of Applied Physics;1998-04
3. Strain relaxation of InGaAs/GaAs superlattices by wet oxidation of underlying AlAs layer;Applied Physics Letters;1998-03-23
4. Analysis of abnormal x-ray diffraction peak broadening from InGaAs/GaAs multiple quantum wells;Journal of Applied Physics;1997-11-15
5. Structural evaluation of InAsP/InGaAsP strained-layer superlattices with dislocations as grown by metal-organic molecular beam epitaxy;Journal of Applied Physics;1997-08-15
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