Long term storage of inversion holes at a superlattice/GaAs interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97306
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3. Capacitance‐voltage and current‐voltage characteristics of molecular beam epitaxially grownp+‐GaAs/AlAs/n‐GaAs heterostructures
4. Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition
5. Optical evidence of staggered band alignments in (Al,Ga)As/AlAs multi-quantum-well structures
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1. Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles;Microelectronics Reliability;2012-11
2. Passivation of an n-type InP surface with an As2S3 film;Journal of Applied Physics;1998-02-15
3. Chapter 16 Nonvolatile Random Access Memories in Wide Bandgap Semiconductors;Semiconductors and Semimetals;1997
4. Passivation of an n‐type GaAs surface with an As2S3 film;Applied Physics Letters;1995-02-06
5. Anisotropic thermionic emission of electrons contained in GaAs/AlAs floating gate device structures;Applied Physics Letters;1989-09-18
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