The effects of deep level traps on the electrical properties of semi-insulating CdZnTe
Author:
Funder
NNSFC
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4863465
Reference24 articles.
1. Cadmium zinc telluride and its use as a nuclear radiation detector material
2. New trends in CdTe and CdZnTe detectors for X- and gamma-ray applications
3. Advances in the crystal growth of semi-insulating CdZnTe for radiation detector applications
4. Advances in the crystal growth and device fabrication technology of CdZnTe room temperature radiation detectors
5. Charge Transport in Arrays of Semiconductor Gamma-Ray Detectors
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1. Effects of Deep-Level Defects on the Current Distortion of CZT γ -Ray Detector Under Temporal Response;IEEE Transactions on Nuclear Science;2024-05
2. Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound;Vacuum;2023-11
3. Investigation of the I–V characteristics of n+/n homojunctions introduced by heavy ion irradiation in CdZnTe crystals;CrystEngComm;2023
4. Investigation on the Polarization Effect and Depolarization Technique of CZT Detector Under High Flux Rate X-/γ-Ray Irradiation;High-Z Materials for X-ray Detection;2023
5. Hydrogen passivation of defect levels in the annealed CdZnTe:In crystals;Journal of Materials Research;2020-10-16
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