Author:
Aluguri R.,Manna S.,Ray S. K.
Subject
Physics and Astronomy (miscellaneous)
Reference23 articles.
1. C. K. Maiti, N. B. Chakrabarti, and S. K. Ray, IEEE Circuits, Devices, and Systems Series (Institution of Electrical Engineers, London, 2001), p. 12.
2. Silicon-Germanium Strained Layer Materials in Microelectronics
3. Ultrathin Strained-Ge Channel P-MOSFETs With High-$K$ /Metal Gate and Sub-1-nm Equivalent Oxide Thickness
4. Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions
5. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
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