As-mediated stacking fault in wurtzite GaN epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1519096
Reference19 articles.
1. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
2. GaInNAs: a novel material for long-wavelength semiconductor lasers
3. Bowing parameter of the band-gap energy of GaNxAs1−x
4. Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy
5. GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
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1. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD;Scientific Reports;2016-04-22
2. Formation and transformation of embedded GaN nanocrystals;Applied Physics Letters;2012-05-14
3. Zinc blende GaAs films grown on wurtzite GaN∕sapphire templates;Applied Physics Letters;2005-03-28
4. Epitaxial c-GaAs/h-GaN Heterostructures;MRS Proceedings;2005-01
5. Ion-beam-assisted molecular-beam epitaxy: a method to deposit gallium nitride films with high crystalline quality;Thin Solid Films;2004-06
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