Al1.3Sb3Te material for phase change memory application-Reference-Cited by-同舟云学术

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Al1.3Sb3Te material for phase change memory application

Published:2011-07-25 Issue:4 Volume:99 Page:043105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Peng Cheng,Song Zhitang,Rao Feng,Wu Liangcai,Zhu Min,Song Hongjia,Liu Bo,Zhou Xilin,Yao Dongning,Yang Pingxiong,Chu Junhao

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3616146

Reference15 articles.

1. Phase-Change Materials for Electronic Memories

2. Low-cost and nanoscale non-volatile memory concept for future silicon chips

3. Phase Change Memory

4. Ga2Te3Sb5-A Candidate for Fast and Ultralong Retention Phase-Change Memory

5. Ge nitride formation in N-doped amorphous Ge2Sb2Te5

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