Doping process of p-type GaN nanowires: A first principle study-Reference-Cited by-同舟云学术

Doping process of p-type GaN nanowires: A first principle study

Published:2017-10-07 Issue:13 Volume:122 Page:135102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Xia Sihao¹,Liu Lei¹,Diao Yu¹,Feng Shu¹

Affiliation:

1. Department of Optoelectronic Technology, School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

Funder

Qing Lan Project of Jiangsu Province-China, the Fundamental Research Funds for the Central Universities-China

the Six Talent Peaks Project in Jiangsu Province-China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5006017

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4. Hydrothermal growth of large-scale macroporous TiO2 nanowires and its application in 3D dye-sensitized solar cells

5. Research on quantum efficiency and photoemission characteristics of negative-electron-affinity GaN nanowire arrays photocathode

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