Electronic Behavior of GaN Nanowire Photocathode Surface Coated with n‐Type GaN Capping Layer via First Principles
Author:
Affiliation:
1. Department of Optoelectronic Technology School of Electronic and Optical Engineering Nanjing University of Science and Technology Nanjing 210094 China
2. Science and Technology on Low-Light-Level Night Vision Laboratory Xi'an 710065 China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Jiangsu Province
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202200305
Reference39 articles.
1. Dependence of quantum efficiency of alkali halide photocathodes on the radiation incidence angle
2. ALICE: The Ultraviolet Imaging Spectrograph Aboard the New Horizons Pluto–Kuiper Belt Mission
3. The quantum efficiency and stability of UV and soft x-ray photocathodes
4. Recent progress in short-range ultraviolet communication
5. Nitride image intensifiers
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