Sub‐mA threshold operation of λ=1.5 μm strained InGaAs multiple quantum well lasers grown on (311)B InP substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106744
Reference15 articles.
1. Very low threshold single quantum well graded‐index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxy
2. High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μm
3. High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers
4. Direct measurement of the transparency current and valence band effective masses in tensile and compressively strained InGaAs/InP multiple quantum‐well laser amplifiers
5. Elimination of intervalence band absorption in compressively strained InGaAs/InP 1.5 μm MQW lasers observed by hydrostatic pressure measurements
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1. Effect of substrate orientation on band structure of bulk III-V semiconductors;AIP Advances;2022-11-01
2. Blue vertical-cavity surface-emitting lasers based on second-harmonic generation grown on (311)B and (411)A GaAs substrates;Journal of Applied Physics;2000-02-15
3. Quantum Well Semiconductor Lasers;Semiconductor Lasers I;1999
4. Orientational dependence of hole effective masses in quantum-well laser structures;Superlattices and Microstructures;1998-07
5. Crystal growth and fabrication of a 1.3-μm-wavelength multiple-quantum-well laser on a (211)A InP substrate;Applied Physics Letters;1997-10-06
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