Direct measurement of the transparency current and valence band effective masses in tensile and compressively strained InGaAs/InP multiple quantum‐well laser amplifiers-Reference-Cited by-同舟云学术

Direct measurement of the transparency current and valence band effective masses in tensile and compressively strained InGaAs/InP multiple quantum‐well laser amplifiers

Published:1992-02-03 Issue:5 Volume:60 Page:554-556
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tiemeijer L. F.,Thijs P. J. A.,Binsma J. J. M.,Dongen T. V.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.106605

Reference20 articles.

1. Reduction of lasing threshold current density by the lowering of valence band effective mass

2. Reduction of lasing threshold current density by the lowering of valence band effective mass

3. Band-structure engineering for low-threshold high-efficiency semiconductor lasers

4. High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μm

5. Improved 1.5 μm wavelength lasers using high quality LP-OMVPE grown strained-layer InGaAs quantum wells

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