Hydrogen sensing properties of a metamorphic high electron mobility transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3052698
Reference15 articles.
1. Trench Pd/Si metal‐oxide‐semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor
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3. Improved Hydrogen-Sensing Properties of a Pt∕SiO[sub 2]∕GaN Schottky Diode
4. Stable hydrogen sensors from AlGaN∕GaN heterostructure diodes with TiB2-based Ohmic contacts
5. Hydrogen Detection by a GaAs-Based Transistor with a Palladium (Pd) Thin Film Gate Structure
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1. Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer;Sensors;2018-06-28
2. Hydrogen sensing characteristics of Pd/SiO2-nanoparticles (NPs)/AlGaN metal-oxide-semiconductor (MOS) diodes;International Journal of Hydrogen Energy;2014-12
3. Comprehensive study of hydrogen sensing phenomena of an electroless plating (EP)-based Pd/AlGaN/GaN heterostructure field-effect transistor (HFET);Sensors and Actuators B: Chemical;2014-01
4. Characteristics of a Pd/AlGaN/GaN Transistor Processed Using the Sensitization, Activation, and Electroless Plating (EP) Approaches;Journal of The Electrochemical Society;2012
5. Highly Sensitive Hydrogen Detection Using a Pt-Catalyzed InN Epilayer;Applied Physics Express;2010-10-22
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