{111} local configurations: The main source of silicon defects during solid phase epitaxial regrowth modeled by lattice kinetic Monte Carlo
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3596466
Reference11 articles.
1. Ion-beam-induced amorphization and recrystallization in silicon
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4. Facet formation during solid phase epitaxy regrowth: A lattice kinetic Monte Carlo model
5. Effect of Oxide on Trench Edge Defect Formation in Ion-Implanted Silicon
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