Optical properties of self-assembled Ge wires grown on Si(113)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1509120
Reference18 articles.
1. Quantum computation with quantum dots
2. Lateral photodetectors with Ge quantum dots in Si
3. Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation
4. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
5. Kinetically Self-Limiting Growth of Ge Islands on Si(001)
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1. Quantum confinement in Si and Ge nanostructures: Theory and experiment;Applied Physics Reviews;2014-03
2. Measurement of the Quantum Conductance of Germanium by an Electrochemical Scanning Tunneling Microscope Break Junction Based on a Jump-To-Contact Mechanism;Chemistry - An Asian Journal;2013-05-23
3. Time-evolution of thermal oxidation on high-index silicon surfaces: Real-time photoemission spectroscopic study with synchrotron radiation;Surface Science;2012-11
4. Direct-gap photoluminescence from germanium nanowires;Physical Review B;2012-07-06
5. Inducing novel electronic properties in 〈112〉 Ge nanowires by means of variations in their size, shape and strain: a first-principles computational study;Journal of Physics: Condensed Matter;2011-12-02
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