Growth and deep ultraviolet picosecond time-resolved photoluminescence studies of AlN/GaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1377317
Reference9 articles.
1. Photoluminescence from sub-nanometer-thick GaN/Al0.8Ga0.2N quantum wells
2. A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
3. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
4. Fundamental optical transitions in GaN
5. Properties of a Si doped GaN/AlGaN single quantum well
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